A New Laser-Combined H-Type Device Method for Comprehensive Thermoelectrical Properties Characterization of Two-Dimensional Materials

Two-dimensional nanomaterials have obvious advantages in thermoelectric device development. It is rare to use the same experimental system to accurately measure multiple thermoelectrical parameters of the same sample. Therefore, scholars have developed suspended microdevices, T-type and H-type methods to fulfill the abovementioned requirements. These methods usually require a direct-current voltage signal to detect in Seebeck coefficient measurement. However, the thermoelectric potential generated by the finite temperature difference is very weak and can be easily overwritten by the direct-current voltage, thereby affecting the measurement accuracy. In addition, these methods generally require specific electrodes to measure the thermoelectric potential. We propose a measurement method that combines laser heating with an H-type device. By introducing a temperature difference in two-dimensional materials through laser heating, the thermoelectric potential can be accurately measured. This method does not require specific electrodes to simplify the device structure. The thermoelectrical parameters of supported graphene are successfully measured with this method; the results are in good agreement with the literature. The proposed method is unaffected by material size and characteristics. It has potential application value in the characterization of thermoelectric physical properties.