A GaN-based SOI plasmonic nanolaser design with high-output power

Abstract Due to its unique optical and electrical properties, gallium nitride (GaN) exhibits great promise for nanolaser cavities. 
These characteristics include high electron mobility, wide bandgap energy, and a high refractive index. Moreover, GaN exhibits remarkable thermal stability, making it appropriate for high-power laser applications. The choice of active medium material can significantly impact the laser's performance, including its wavelength, output power, and efficiency. This work designed and numerically demonstrated a GaN -WG built-in SiO_2 substrate with an input and output Si-waveguide nanolaser. These nanolasers lase multi-output wavelengths in both directions 
(forward and backward) at 1680 and 1750 nm, respectively. The pump power is 800 nm. The GaN- waveguide material, when used in nanolaser cavity design, gives many different advantages like concentration of the Gaussian envelope and improved polarization depending on rate (PDR). Increasing lasing efficiency by 76.6 % in the forward direction and 96.7% in the backward direction. Get a low lasing threshold of approximately 200 μW in the forward direction and 180 μW backward direction. Finally, improved the output laser power in both directions (460 μW and 600 μW) in the forward and backward directions, respectively.