Advanced understanding of gap-state roles at metal/semiconductor interfaces: Schottky barrier and interface defects

Abstract At metal/semiconductor interfaces, gap states emerge within the semiconductor bandgaps due to the breakdown of translational symmetry and interface defects. These gap states not only dominate the Schottky barrier height but also contribute to the increase in interface defects. In this review paper, we discuss recent advancements in the understanding of gap states and their roles, i.e. the physics of gap states, at metal/semiconductor interfaces based on our recent theoretical studies.