Multiferroic Magnetic Sensor Based on AlN and Al0.7Sc0.3N thin film $S$

In this paper, multiferroic magnetic sensors based on AlN and Al 0.7 Sc 0.3 N thin films have been studied by Finite Element Analysis (FEA). Magnetostrictive material FeGaB is utilized as the sensing element to detect external DC magnetic fields. The bilayer composite magnetoelectric structure is designed to operate at contour mode resonance in order to increase the sensitivity. A detailed description of the device model and simulated parameters are introduced. Under different DC magnetic fields, the device resonant frequency will change due to $\Delta E$ effect. Furthermore, the thickness influence of AlN and Al 0.7 Sc 0.3 N thin films on the resonator characteristics has been analyzed.