电流传感器
材料科学
MOSFET
电子工程
沟槽
依赖关系（UML）
电流（流体）
计算机科学
电气工程
电压
晶体管
工程类
纳米技术
软件工程
图层（电子）
作者
Radim Spetik,Justin Yerger,Ladislav Seliga,Filip Kudrna,Santosh Menon,B. Greenwood
出处
期刊：International Symposium on Power Semiconductor Devices and IC's
日期：2021-05-30
卷期号：: 295-298
标识
DOI：10.23919/ispsd50666.2021.9452309
摘要
The paper summarizes layout considerations as well as experimental data of low voltage (50 V) trench MOSFET with integrated current sensor. Major effects responsible for errors of the sensed current as well as its current dependency are discussed. Then, layout features leading to more accurate current sensing at small current are outlined.
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