太赫兹辐射
太赫兹时域光谱学
耗散因子
材料科学
电介质
硅
太赫兹光谱与技术
介电损耗
低温恒温器
光谱学
Crystal(编程语言)
光电子学
光学
晶体硅
超导电性
凝聚态物理
物理
量子力学
程序设计语言
计算机科学
作者
Bowen Fan,Zhaohang Peng,Wei Miao,Sheng‐Cai Shi
摘要
Conventional coherent and non-coherent techniques such as quasi-optical vector network analyze (VNA) and Fourier transform spectroscopy (FTS) can be employed to measure the exhaustive properties of dielectrics in the terahertz band. However, the VNA can only cover a narrow frequency range, and the FTS takes a relatively long period of time for measurement. By contrast, the terahertz time domain spectroscopy (TDS) allows the measurement of material properties such as dielectric constant and loss tangent in a wide frequency range and in a short period of time. Using a terahertz TDS, we characterize the complex properties of some materials commonly used in terahertz superconducting receivers, including high density polyethylene (HDPE), single crystal magnesium oxide (MgO), single crystal quartz, single crystal sapphire, single crystal silicon (S.C. silicon), high resistance silicon (H.R. silicon), and ultra-high molecular weight polyethylene (UHMWPE). The measurements at room temperature have finished yet. The measurements at cryostat temperature are in progress and will be published later.
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