弯曲半径
材料科学
波导管
绝缘体上的硅
波长
光学
硅
氮化硅
半径
光电子学
光子集成电路
光子学
硅光子学
弯曲
插入损耗
物理
计算机安全
计算机科学
复合材料
作者
Jeong Hwan Song,Tangla D. Kongnyuy,Peter De Heyn,S. Lardenois,Roelof Jansen,Xavier Rottenberg
标识
DOI:10.1109/jlt.2020.2978420
摘要
We report the design and experiment of advanced bends which are composed of widening width and varying radius. Advanced bends are based on silicon nitride waveguide for the wavelength of 850 nm and silicon waveguide for the wavelength of 1550 nm. The reduction of bending loss from 0.13 to 0.04 dB/90° by the advanced shape on a silicon nitride waveguide bend with 15 μm-radius at the wavelength of 850 nm was achieved. The bending loss from the silicon advanced bend was measured to be 0.012 dB/90° when R = 2 μm at the wavelength of 1550 nm. This is the best result of 2 μm-bends in a 220 nm-SOI platform at 1550 nm.
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