杂原子
噻吩
催化作用
石墨烯
氯化物
化学
降级(电信)
电化学
光化学
纳米材料
硫黄
密度泛函理论
无机化学
材料科学
兴奋剂
纳米技术
有机化学
计算化学
电极
计算机科学
物理化学
戒指(化学)
电信
光电子学
作者
Qian Zhang,Bing Xin Wang,Yong Bo Yu,Bor‐Yann Chen,Jun-ming Hong
标识
DOI:10.1016/j.scitotenv.2020.136730
摘要
Although graphene exhibited excellent performance, its capability of electrochemical catalytic oxidation would significantly improve by modification via sulfur (S)-doping. However, due to the complicated doping species of heteroatoms, the detailed mechanism was still remained open for discussion. Thus, this first-attempt study tended to decipher such mechanism behind the direct and indirect oxidation by analyzing S species in S-graphene. The density functional theory (DFT) was adopted for reactive center calculation and confirmation of secondary active species, to discuss the degradation pathway. As the experimental and calculation results, the thiophene structure S was more favorable for electron acceptation in direct oxidation. Chloride reactive species, as the most effective secondary functionalities (rather than •OH), were favorably generated on the edge doped S position than thiophene structured S in defects, to further trigger the indirect oxidation. However, the extensive contents of reactive functionalities could act as trap for self-annihilation of chloride reactive species, resulting in poor electrocatalytic degradation of the pollutants. This study deepened the understanding of heteroatoms doping for electrochemical catalytic oxidation.
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