Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout

Commercially available high voltage Silicon Carbide (SiC) Junction Barrier Schottky (JBS) are typically designed with advanced anode topography depending on the manufacturer and the specific current-voltage rating. The anode layout of JBS rectifiers affects a wide range of electro-thermal parameters such as the leakage current and the response of the diode to over-current events (surge current capability). In this paper, the effect of 3D anode geometries for the active area of 3.3 kV-20 A SiC JBS diodes is investigated in detail for both single and repetitive surge current events. By means of advanced 3D electro-thermal finite element simulations, a trade-off between the main factors which are contributing to the bipolar behavior activation is identified.