A Simple Emitter Model for Quantum Efficiency Curves and Extracting the Emitter Saturation Current

We developed a two-parameter model for emitters that can be used (i) to extract the emitter saturation current J0E from the short-wavelength range of internal quantum efficiency (IQE) curves and (ii) to quantify the short-circuit current loss caused by recombination in the emitter. The main advantage is that only the emitter sheet resistance is required as an additional input parameter; no dopant profiles, surface recombination velocities etc. are necessary. The information obtained from the IQE also allows for calculating the saturation current of the metalized emitter underneath the front contacts.