材料科学
退火(玻璃)
晶界
分析化学(期刊)
光致发光
电阻率和电导率
兴奋剂
电导率
溅射沉积
霍尔效应
溅射
薄膜
微观结构
光电子学
冶金
纳米技术
化学
物理化学
色谱法
电气工程
工程类
作者
Francisco Faro Viana,Maria J Susano,Gonçalo Cotovio,Jungsu S. Oh,Jung Eun Shin,Woo Seung Lee,Kang Yang,J.J. Kim,A.J. Oliveira-Maia
标识
DOI:10.1016/j.euroneuro.2021.10.196
摘要
Gold-doped ZnO (ZnO:Au) films were grown on quartz substrates at room temperature by radio frequency magnetron sputtering technique and then annealed in the temperature ranging from 350 to 800 °C in argon ambience. It is found that the Au substitute for Zn in positive univalence (AuZn1+) in the as-grown ZnO:Au film. When the ZnO:Au is annealed above 600 °C, some of the AuZn1+ begin to precipitate from the ZnO:Au and become metal Au existing in the grain boundaries of the ZnO:Au, implying that the solid solubility of Au in ZnO decreases with increasing temperature. p-type conductivity is obtained in the ZnO:Au annealed at 350 °C, but the conductivity changes gradually from p-type to n-type with increasing annealing temperature. The optical band-gap of the ZnO:Au shows red-shift compared to undoped ZnO. The ZnO:Au shows room temperature photoluminescence (PL) quenching as annealed below 800 °C, but has two weak PL peaks, located at 2.417 and 3.299 eV, respectively, as annealed at 800 °C. The electrical and optical properties of the ZnO:Au are affected by the chemical states and content of the Au doped, and the mechanism of the effects are suggested in the present paper.
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