High Speed 2 × 2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

A 2 × 2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below 10 ns. The flat response spectrum throughout the 1542–1562 nm wavelength range indicates that this device is insensitive to wavelength.