Impact ionization rates for electrons and holes in Ga0.47In0.53As

We report the determination of the impact ionization rates for holes and electrons in Ga0.47In0.53As with the electric field oriented in the 〈100〉 direction. Our measurements show that the ionization rate for electrons α is greater than that for holes (β) by about a factor of 2 over electric fields ranging from 2.0×105 to 2.5×105 V cm−1 at 295 K.