Properties of high-power Cryo-MOSFETs

At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed.