Investigation of Nano-Sized Hole/Post Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes

This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.