InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

Abstract InGaN-based LEDs on convex lens-shaped GaN microstructures are fabricated. The gently sloping microstructures enable us to employ simple device processes similar to those for conventional planar LEDs. The fabricated LEDs show a clear rectifying property and broadband electroluminescence spectra ranging from ∼380 to ∼500 nm due to the multiwavelength emission properties of the InGaN quantum wells. Furthermore, the peak wavelength continuously changes from ∼470 to ∼410 nm within a particular current range.