光探测
材料科学
光电子学
光电探测器
纳米片
太赫兹辐射
光电效应
带隙
拓扑绝缘体
宽带
可见光谱
光电导性
电子迁移率
光学
纳米技术
物理
量子力学
作者
Shijie Chen,Tuntan Wu,H. Chen,Wei Zhou,Yanqing Gao,Niangjuan Yao,Lin Jiang,Zhiming Huang
出处
期刊:Small
[Wiley]
日期:2024-04-19
标识
DOI:10.1002/smll.202312219
摘要
Abstract Broadband room‐temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) have narrow bandgap structures with a wide absorption spectral response range, which should meet the requirements of broadband detection. However, owing to their high carrier concentration and low carrier mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable for photodetection. Here, InBiTe 3 alloy nanosheet formed by doping In 2 Te 3 into Bi 2 Te 3 (≈ 1:1) is utilized, effectively improving carrier mobility by over ten times while maintaining a narrow bandgap structure, to fabricate a broadband photodetector covering a wide response range from visible to millimeter wave (MMW). Under the synergistic multi‐mechanism of the photoelectric effect in the visible−infrared region and the electromagnetic‐induced potential well (EIW) effect in Terahertz band, the performance of NEP = 75 pW Hz −1/2 and response time τ ≈100 µs in visible to infrared band and the performance of NEP = 6.7 × 10 −3 pW Hz −1/2 , τ ≈8 µs in Terahertz region are achieved. The results demonstrate the promising prospects of topological insulator alloy (like InBiTe 3 ) nanosheet in optoelectronic detection applications and provide a direction for the research into high‐performance broadband photoelectric detectors via TIs.
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