The Development and Progress of Multi-Physics Simulation Design for TSV-Based 3D Integrated System

In order to meet the requirements of high performance, miniaturization, low cost, low power consumption and multi-function, three-dimensional (3D) integrated technology has gradually become a core technology. With the development of 3D integrated technology, it has been used in imaging sensors, optical integrated microsystems, inertial sensor microsystems, radio-frequency microsystems, biological microsystems and logic microsystems, etc. Through silicon via (TSV) is the core technology of a 3D integrated system, which can achieve vertical interconnection between stacked chips. In this paper, the development and progress of multi-physics simulation design for TSV-based 3D integrated systems are reviewed. Firstly, the electrical simulation design of TSV in a 3D integrated system is presented, including the lumped parameters model-based design and numerical computation model-based design. Secondly, the thermal simulation design of TSV in a 3D integrated system is presented based on the analytical model or numerical computation model. Thirdly, the multi-physics co-simulation design of TSV in a 3D integrated system is presented, including the thermal stress and electron thermal coupling simulation design. Finally, this paper is concluded, and the future perspectives of 3D integrated systems are presented, including the advanced integrated microsystems, the crossed and reconfigurable architecture design technology and the standardized and intelligent design technology.