Structuring Interdigitated Back Contact Solar Cells Using the Enhanced Oxidation Characteristics Under Laser‐Doped Back Surface Field Regions

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer‐based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser‐doped n ++ back surface field (BSF) regions with high‐phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl 3 diffusion serve as a precursor layer for the formation of local heavily laser‐doped n ++ BSF regions. The laser‐doped n ++ BSF regions exhibit a 2.6‐fold increase in oxide thickness compared to the nonlaser‐doped n + BSF regions after undergoing high‐temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser‐doped and nonlaser‐doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof‐of‐concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.