Theoretical study of conventional semiconductors as transducers to increase power and efficiency in betavoltaic batteries

Semiconductor materials play an important role as transducers of electrical energy in betavoltaic batteries. Optimal selection of effective factors will increase the efficiency of these batteries. In this study, based on common semiconductors and relying on increasing the maximum efficiency of betavoltaic batteries and the possibility of using 3H, 63Ni, and 147Pm beta sources, the indicators and criteria for optimal selection of semiconductor materials are determined. Evaluation criteria include the backscattering coefficient of beta particles from semiconductors, efficiency of electron-hole pairs generation, electronic specifications and properties, radiation damage threshold, radiation yield, stopping power and penetration of beta particles in semiconductors, physical characteristics, temperature tolerance, accessibility, and fabrication are considered. Conventional semiconductors have been quantitatively evaluated based on these criteria and compared with silicon semiconductors. 10 semiconductors, , diamond, 2H-SiC, 3C-SiC, 4H-SiC, AlN, MgO, B4C with effective atomic number less than 14 and bandgap energy above 1.12 eV at room temperature (300K) compared to Silicon semiconductors are evaluated. Finally, according to the evaluation indicators, Diamond, c-BN, and 4H-SiC are more suitable semiconductors in terms of efficiency have selected, respectively. The results indicate that for planar batteries, a betavoltaic semiconductor type junction for Schottky diamond with 147pm radioisotope, and 4H-SiC semiconductors with 63Ni or 3H radioisotopes, and for three-dimensional structures of betavoltaic batteries, Si combination with 147pm or 63Ni radioisotopes is recommended.