Sub-500 nm patterned synthesis of corrosion resistant SnO2 and Pt@SnO2 using metal-organic precursor

In this study, a thin film of transparent conducting metal oxide, SnO2, is obtained using a novel metal-organic precursor, Sn-TOABr complex. The precursor is synthesized by phase-transferring tin from the aqueous layer to the liquid-liquid interface. The formed precursor is used for depositing SnO2 thin films over arbitrary and even large substrates via the modified atmospheric pressure chemical vapor deposition (MAPCVD) method in a simple furnace at 450 °C. The vapor-deposited SnO2 thin films are crystalline, semiconducting, highly transparent with excellent mechanical robustness against scratch and scotch tape tests, and resistant towards corrosive media. The obtained robust thin films via this MAPCVD technology expand applications towards protective coatings for arbitrary substrates. Using a simple direct micromolding technique, sub-500 nm patterns of SnO2 and Pt@SnO2 were obtained. This single-step soft lithography patterning technique, besides being cost-effective, offers a large throughput.