生产线后端
PMOS逻辑
材料科学
互连
CMOS芯片
钝化
光电子学
纳米技术
计算机科学
电气工程
电压
电介质
工程类
晶体管
电信
图层(电子)
作者
Carl H. Naylor,K. Maxey,Christopher Jezewski,Kevin P. O’Brien,Ashish Verma Penumatcha,Mahmut S. Kavrik,Bindu Agrawal,C. V. Littlefield,J. Lux,B.L. Barley,J. R. Weber,Arnab Sen Gupta,C. J. Dorow,N. Arefin,Sean W. King,Ramanan Chebiam,John J. Plombon,Scott B. Clendenning,Uygar E. Avci,M. Kobrinsky
标识
DOI:10.23919/vlsitechnologyandcir57934.2023.10185307
摘要
2D materials, such as Transition Metal Dichalcogenides (TMDs), have potential for large impact in future technologies due to their inherent atomic thickness. Here, we present multiple applications of 2D materials in the Back End of Line (BEOL). First, we report various 300 mm BEOL compatible growth methods for 2D materials. We reveal the ultra-scaling of interconnect barriers with a 10 Å 2D BEOL barrier yielding comparable performance to 25 Å Tantalum (Ta). Furthermore, we present a novel BEOL passivation technique for an unstable film by encapsulating it with a 2D material. Lastly, with a 300 mm BEOL grown WSe 2 film, we report appreciable PMOS currents up to 15 μA/μm for future BEOL CMOS technologies.
科研通智能强力驱动
Strongly Powered by AbleSci AI