Artificial Neural Network Identification of GeSe-Based Two-Color Polarization-Sensitive Photodetector

For low-dimensional materials, the in-plane anisotropy of their structure can realize the detection of polarized light. This characteristic can be utilized to fabricate polarization-sensitive photodetectors without polarizers. It is conductive to the miniaturization and integration of devices. As a typical IV-VI group material, GeSe is easy to be synthesized by chemical vapor transport method, and has obvious response to the light in the visible and near-infrared band. In this study, a GeSe-based polarization-sensitive photodetector was fabricated. The sensitivity of GeSe to the polarization angle of light in the visible and near-infrared bands was explored. And a program was used to perform large-scale imaging. The polarized light response in the visible and near-infrared bands was compared and analyzed by artificial neural network.