Research progress in novel chemical–mechanical synergistic enhanced polishing methods for silicon carbide substrates

< 0.5 nm) in SiC substrate processing has become a critical goal. However, the high hardness and chemical inertness of SiC pose significant challenges to conventional chemical mechanical polishing (CMP) techniques, which struggle to balance the material removal rate and surface quality effectively. This paper provides a systematic review of commonly used enhanced polishing techniques for SiC-CMP, including ultraviolet photocatalysis, mixed abrasives, electrochemical methods, and ultrasonic-assisted polishing. It analyzes the advantages, limitations, and current application status of each technology. This paper places particular emphasis on the research progress of novel chemical-mechanical synergistic enhanced polishing technologies, which aim to improve both machining efficiency and surface quality. Finally, it discusses the technical challenges and future development directions faced by these emerging technologies.