Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors
作者
N. Nenadović,Lis K. Nanver,H. Schellevis,D. de Mooij,V. Zieren,J.W. Slotboom
标识
DOI:10.1109/icmts.2002.1193175
摘要
A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.