材料科学
扫描电子显微镜
结晶度
热重分析
热解
透射电子显微镜
兴奋剂
溶胶凝胶
等温过程
化学工程
碳纤维
复合材料
硅
纳米技术
复合数
冶金
工程类
物理
热力学
光电子学
作者
Lianru Ma,Yanxiang Wang,Yaoyao Wang,Shan-long Fu
标识
DOI:10.1016/j.colsurfa.2019.123700
摘要
The carbon-doped silicon dioxide (C-doped SiO2) coatings are prepared on the surface of carbon fibers by a facile sol-dipping method using tetraethoxysilane (TEOS) and diethoxydimethylsilane (DMDES) as precursors. The effect of heat treatment temperature and dipping times on the formation of the C-doped SiO2 coatings is studied. The structure and morphology of C-doped SiO2 coatings are analyzed by the scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The oxidation resistance of the carbon fibers with and without coatings is investigated by thermogravimetric analysis (TG) and static isothermal oxidation experiments. The results show that the C-doped SiO2 products obtained by pyrolysis of the gel at 900 ℃ displays high crystallinity and low carbon content. The continuous and uniform coatings with the thickness about 200 nm are formed after three times dipping, which improves the initial oxidation temperature of carbon fibers about 110 ℃.
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