An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability

Organic field-effect transistor (OFET)-based circuits require stable device performance. However, OFETs are suffering from process variation and environmental instability, which limits circuit performance. Here, an optimally designed XOR gate based on p-type-only OFETs is reported. The circuit has excellent postfabrication tunability that is enough to cope with a threshold voltage shift as high as 1.5 V. Moreover, the circuit largely reduces the number of transistors by 81% compared with conventional design and can realize ultralow power consumption. In addition, the XOR gate can act as a programmable inverter with good regenerative property. Utilizing the XOR gate, the authors demonstrate its application in cryptography. A 3481-bit message is correctly encrypted and decrypted with an accuracy rate of up to 98.5%. The authors’ work enables the accurate prediction of circuit operation in the presence of OFET threshold voltage shifts.