Organometallic Compounds as Precursors for Chemical Vapor Deposition of Thin Films of Inorganic Materials

Several studies concerning the MOCVD of In-based epitaxial materials, oxides of Ti, Zr, Hf, Tl and Pt metal have been carried out also by using new precursors. It has been found that In(CH 3 ) 2 C 2 H 5 suffers disproportionation reactions, while epitaxial InP thin films of promising quality have been obtained by reaction of the new precursors [In(CH 3 ) 2 pz] 2 (pz = pyrazole) and [(CH 3 CH 2 ) 2 InN(CH 3 ) 2 ] 2 with PH 3 . The oxide thin films have been deposited both using oxygenated precursors (TiO 2 and HfO 2 ) and oxygen free precursors (ZrO 2 from Zr[N(C 2 H 5 ) 2 ] 4 and Tl 2 O 3 from TlC 5 H 5 and TlC 5 H 4 CH 3 ). In some cases the effect of the oxygen and the thermal behaviour of the precursors have been studied. Very pure Pt films exempt from C have been obtained with the new precursor Pt[C 5 H 4 CH 3 ][CH 2 CHCH 2 ] in N 2 atmosphere free of H 2 .