4T-Pixel CMOS Image Sensors for enhanced UV sensing and lower readout noise

An improved 4T-Pixel CMOS-Image-Sensor (CIS) is presented, featuring an UV-Window (UVW), a modified Anti-Reflective-Coating (ARC) and Ultra-Low-Noise (ULN) transistors. Some of the key parameters such as UV Quantum-Efficiency (QE) and the Read-Out-Noise (RON) are improved to support high-performance imaging in diverse applications. By use of these new features, it is possible to achieve a QE in the UV-Range of 65% with the modified ARC and up to 80% with the UVW as well as a RON reduction of more than 50%.