记忆电阻器
混乱的边缘
蔡氏电路
非线性系统
分叉
振荡(细胞信号)
控制理论(社会学)
电感器
拓扑(电路)
霍普夫分叉
平衡点
数学
计算机科学
物理
电压
算法
人工智能
量子力学
控制(管理)
遗传学
组合数学
生物
作者
Zubaer Ibna Mannan,Changju Yang,Hyongsuk Kim
出处
期刊:IEEE Circuits and Systems Magazine
[Institute of Electrical and Electronics Engineers]
日期:2018-01-01
卷期号:18 (2): 14-27
被引量:39
标识
DOI:10.1109/mcas.2018.2821724
摘要
In this paper we propose a new first-order generic memristor, namely, a 4-lobe Chua corsage memristor, as an extension of the 2-lobe Chua corsage memristor. The newly designed corsage memristor exhibits more complex dynamical routes with three stable equilibrium points for which it reveals a higher degree of versatility that the dynamic route changes in response to a change in initial conditions. One of the most important feature of our new memristor is its contiguous DC V-I curve. In contrast, most published highly-nonlinear DC V-I curves have several disconnected branches. Moreover, in this paper, we exploit the properties of the 4-lobe Chua corsage memristor to design an oscillator by connecting the memristor in series with an inductor and a battery. The resulting circuit oscillates about a locallyactive operating point located on the negative slope region of the memristor?s DC V-I curve. We investigate the local activity, edge of chaos, and Hopf bifurcation phenomena and carry out an in-depth analysis of the nonlinear dynamics of the oscillation in our oscillator circuit.
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