Effects of tunneling oxide defect density and inter-diffused carrier concentration on carrier selective contact solar cell performance: Illumination and temperature effects

In this study, technology computer-aided design (TCAD) was used to investigate carrier selective contact solar cell performance based on the boundary of tunneling oxide and electron selective contact layer properties. The role of tunneling oxide quality in the passivation and inter-diffusion properties of the plasma-enhanced chemical vapor deposition of phosphorus-doped amorphous silicon as an electron selective contact layer is studied for carrier selective contact solar cells. Tunnel oxide quality varies according to the ratio of Si4+ to Si2+ state. For the Si4+/Si2+ ratio of 4, open-circuit voltage of 730 mV and the lowest interface trap density of 5.3 × 1010 cm−2 eV−1 are achieved. The change in diffusion depth of the doped layer with respect to the annealing temperature is analysed by transmission electron microscopy (TEM)/energy dispersive X-ray spectroscopy (EDS) measurement. Carrier selective contact solar cell parameters are optimized by incorporating the experimental values of interface trap density, inter-diffused impurity concentration, and depth in the Quokka 3 TCAD tool. Solar cell conversion efficiency of 24.31% was obtained. To understand the response of carrier selective solar cell to the environmental changes, the output characteristics of the solar cell were studied by varying the illumination temperature by 10% of the standard test conditions (STC) and temperature from 277 K to 377 K (difference of 100 K).