A bonded template-assisted monolithic integration platform

We present room-temperature continuous-wave lasing of 1.31 μm multi-quantum well lasers on a novel defect-free heterogeneous III-V-on-silicon integration platform. The epitaxially grown laser structure on the platform shows significantly low dislocation density of 9.5×10⁴ cm^-2, leading to a minimal threshold current density of 813 A/cm². These results bring promise to create multi functionalities like source, modulation and detection, etc. on such a defect-free, low-cost, large-scale substrate for Datacom applications.