光电子学
硅
红外线的
响应度
量子点
三极管
材料科学
光学
光电探测器
物理
电阻器
电压
量子力学
作者
Wen Zhou,Li Zheng,Zhijun Ning,Xinhong Cheng,Fang Wang,Kaimin Xu,Rui Xu,Zhongyu Liu,Man Luo,Weida Hu,Huijun Guo,Wenjia Zhou,Yuehui Yu
标识
DOI:10.1038/s41467-021-27050-9
摘要
of -0.4 V) at 1,550 nm among the infrared sensitized silicon detectors, which opens a new path towards infrared and visible imaging in one chip with silicon technology compatibility.
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