钝化
单层
薄膜晶体管
材料科学
晶体管
光电子学
主管(地质)
薄膜
无定形固体
半导体
偶极子
纳米技术
图层(电子)
电气工程
化学
电压
结晶学
工程类
有机化学
地质学
地貌学
作者
Yayi Chen,Bin Li,Wei Zhong,Dongxiang Luo,Guijun Li,Changjian Zhou,Linfeng Lan,Rongsheng Chen
标识
DOI:10.1109/ted.2021.3126568
摘要
Self-assembled monolayers (SAMs) with three different head functional groups are prepared as passivation layers (PVLs) for amorphous InSnZnO (ITZO) thin-film transistors (TFTs). Head groups exhibit considerable modulation of surface topography and surface energy, leading to a difference in the passivation effect. This variation is attributed to the discrepancy of the binding methods determined by the head groups. Additionally, the head groups also modulate the relative direction and strength properties of dipoles at ITZO surface, which affects the surface potential and carrier density in ITZO films. As a consequence, the electric performance and stability of devices can be modulated by head groups in SAMs. These results provide a likely and low-cost method to ameliorate the capability of TFTs.
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