1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region

Abstract Неre we report a monolitic long-wavelength vertical cavity surface-emitting laser based on GaAs with bottom GaAs/AlGaAs distributed Bragg reflectors (DBRs), metamorphic optical cavity with In 0.41 Ga 0.59 As/In 0.25 Ga 0.75 As-active region providing emission near 1.3 μ m with high modal optical gain and top dielectric SiO 2 /Ta 2 O 5 DBRs. We achieve continious wave single-mode operation at room temperature under optical pumping. The proposed approach has potential for high output power and high temperature (up to 200 °C) stable operation.