Silicon carbide p-n structures as power rectifiers
作者
V. E. Chelnokov,Anatoly M. Strel’chuk,P. A. Ivanov,G. Lentz,C. Parniere
出处
期刊：Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs [Institute of Electrical and Electronics Engineers] 日期：2002-12-17卷期号：: 253-256被引量：1
标识
DOI：10.1109/ispsd.1994.583735
摘要
We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide.
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