Studies on Electronic Structure and Optical Properties of MoS2/X (X = WSe2, MoSe2, AlN, and ZnO) Heterojunction by First Principles

The single-layer MoS2 is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS2/WSe2, MoS2/MoSe2, MoS2/AlN, and MoS2/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS2, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS2/WSe2 and MoS2/MoSe2, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS2/ZnO and MoS2/AlN. Consequently, MoS2-based heterojunctions incorporating chalcogenide components WSe2 and MoSe2, respectively, exhibit superior catalytic activity compared to MoS2 heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS2/MoSe2 exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance.