Tin-based perovskite light-emitting diodes (PeLEDs) are attractive Pb-free emitters but remain limited by oxidation of Sn2 + to Sn4+, which creates deep traps and poor morphology. This review examines three chemical levers: reducing agents, coordination-controlled crystallization, and interfacial passivation, and how they suppress oxidation and translate into higher PLQY, improved EQE, and longer device lifetime. Synthesizing evidence across case studies, we find the most durable gains arise from co-optimizing redox buffering with growth control and targeted passivation. We close with practical research directions, including AI-assisted additive screening, in-situ/operando oxidation mapping, and scalable processing windows for high-stability Sn-based PeLEDs.