拓扑绝缘体
拓扑(电路)
极化(电化学)
物理
磁场
凝聚态物理
铁电性
拓扑序
几何相位
桥接(联网)
铁磁性
电子能带结构
实现(概率)
绝缘体(电)
量子反常霍尔效应
相(物质)
拓扑量子数
带隙
形式主义(音乐)
相变
磁性结构
光子学
霍尔效应
作者
Xiaoliang Xiao,Zi-Ming Wang,X. Luo,Yuanjun Jin,Jin-Zhu Zhao,Xiaozhi Wu,Rui-Qiang Wang
出处
期刊:Physical review
[American Physical Society]
日期:2025-10-15
卷期号:112 (20)
被引量:1
摘要
Achieving precise control of the topological phases spanning normal insulators, topological insulators (TIs), and second-order TIs (SOTIs) is still rare in two-dimensional atomic crystals. Herein, through a low-energy effective model, we propose a generalized design strategy that enables the systematic control of nontrivial topology in heterobilayers under ferroelectric polarization reversal and an external magnetic field. Our analysis reveals that the polarized state not only induces the band inversion to form a TI phase but also breaks its out-of-plane mirror symmetry, thereby enabling the realization of SOTIs under weak magnetic fields. Moreover, first-principles calculations and topological analysis have confirmed that a series of heterobilayers exhibit switchable topological states manifested through quantized spin Hall conductance, edge states, and spatially resolved zero-dimensional corner states. This work not only provides a practical framework for engineering a normal insulator to achieve the TI/SOTI phase but also opens up a technological avenue bridging first-order and higher-order band topologies.
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