材料科学
折射率
带隙
摩尔吸收率
薄膜
衰减系数
电介质
微晶
色散(光学)
分析化学(期刊)
图层(电子)
吸收(声学)
扫描电子显微镜
光学
光导率
场发射显微术
光电子学
衍射
复合材料
纳米技术
凝聚态物理
化学
冶金
物理
色谱法
作者
I.M. El Radaf,Ahmed Saeed Hassanien
标识
DOI:10.1016/j.physb.2023.414867
摘要
Thin CuInSnS4 films, CITS of different thicknesses have been synthesized by spray pyrolysis method for the first time. These films have been deposited on pre-cleaned soda-lime glass substrates. X-ray diffraction, XRD, energy dispersive X-ray analysis, EDX, and field-emission-scanning electron microscope techniques have been utilized to characterize these CITS films. XRD-studies affirmed the polycrystalline nature of films, in addition EDX-analysis of films proves that they are stoichiometric films. Spectrophotometric studies indicate that the optical bandgap energy of films decreased from 1.88eV to 1.63eV and arose from direct allowed transitions; on contrary, the Urbach energy increases from 58 meV to 73 meV as film thickness increases. Increasing the thickness also leads to increase the absorption coefficient, extinction coefficient, and refractive index of films. Dielectric constants, and optical and electrical conductivities, along with the dispersion energies have been estimated and discussed. The dispersion energy increased (13.29eV–16.76eV), while the oscillator energy decraeses (2.98eV–2.53eV). Some linear and nonlinear optical parameters of films have been also investigated. Hot probe procedure was employed to check the semiconductor type of CuInSnS4 layers, which reveals that films have p-type conductivity. Obtained findings demonstrate that CuInSnS4 layers can be utilized as a new absorber layer for solar cells.
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