Enhancing Charge Transport and Fast Non‐Volatile Memory in 2D Tin‐Based Perovskite Transistors through Porphyrin‐like Additives

Abstract Hybrid metal halide perovskite transistors are attracting increasing attention due to their promising optoelectronic properties and potential applications in next‐generation electronic devices. However, the stability and charge transport limitations of tin (Sn)‐based halide perovskites (THPs) remain significant challenges. In this study, we introduce 2‐thiophene‐ethylammonium (TEA) as an A‐site cation in 2D THP field‐effect transistors (FETs) to achieve better energy level alignment and device performance. Next, phthalocyanine derivatives, phthalocyanine (H 2 Pc) and Sn phthalocyanine (SnPc), are introduced as functional additives to stabilize the perovskite structure and mitigate Sn 2 ⁺ oxidation. The results show that the addition of these additives greatly improves the FET performance, with a hole mobility of 3.72 (H 2 Pc) and 4.40 cm 2 V −1 s −1 (SnPc), surpassing the pristine TEA 2 SnI 4 device. Moreover, the potential of these perovskite transistors for photomemory applications is also demonstrated, where they exhibit stable and nonvolatile memory effects under multi‐wavelength (365, 405, and 530 nm) optical stimuli. These devices can maintain memory retention even after fast light stimulation (0.001 s), highlighting their potential for memory computing applications. This work provides an integrated strategy to improve the stability, charge transport, and optoelectronic function of Sn‐based perovskite transistors.