金属有机气相外延
材料科学
响应度
化学气相沉积
退火(玻璃)
异质结
二次离子质谱法
光电子学
光电探测器
分析化学(期刊)
光电效应
欧姆接触
兴奋剂
薄脆饼
碲化镉光电
光电导性
化学
离子
外延
纳米技术
复合材料
有机化学
色谱法
图层(电子)
作者
Jan Sobieski,M. Kopytko,Kacper Matuszelański,W. Gawron,J. Piotrowski,Piotr Martyniuk
出处
期刊:Sensors
[Multidisciplinary Digital Publishing Institute]
日期:2024-04-29
卷期号:24 (9): 2837-2837
摘要
HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material. However, the relatively low (350 °C) IMP MOCVD growth temperature may result in significant residual compositional inhomogeneities. In this work, we have investigated the residual inhomogeneities in the IMP-grown HgCdTe layers and their influence on material properties. Significant IMP growth-related oscillations of composition have been revealed in as-grown epilayers with the use of a high-resolution Secondary Ion Mass Spectroscopy (SIMS). The oscillations can be minimized with post-growth annealing of the layers at a temperature exceeding that of growth. The electric and photoelectric characterizations showed a significant reduction in the background doping and an increase in the recombination time, which resulted in dramatic improvement of the spectral responsivity of photoconductors.
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