材料科学
放大器
变压器
电气工程
光电子学
工程类
电压
CMOS芯片
作者
Wentao Zhou,Zixian Ma,Bing Lan,Jun Chen,Zhaosheng Liu,Qun Jane Gu,Chunyi Song,Zhiwei Xu
标识
DOI:10.1109/lmwt.2024.3386883
摘要
This letter presents a sub-GHz ultra-wideband power amplifier (PA) in a 0.25- ${\mu}$ m GaAs pHEMT process. A compact Guanella-type transformer is designed with a space-saving multilayer-stacked topology to achieve single-ended to differential conversion and impedance transformation over a multioctave frequency range. The proposed PA with differential cascode topology andoff-chip transformers can achieve a high saturated output power larger than 31 dBm across 50680 MHz (173% fractional bandwidth) in a small dimension. When with a 5-V supply, the fabricated PA microsystem delivers a 34.5-dBm peak output power and achieves a 24.0-dB maximum gain, a 52.7% peak power-added efficiency (PAE), as well as high linearity.
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