发光二极管
材料科学
光电子学
光学
二极管
薄脆饼
制作
波长
物理
医学
替代医学
病理
作者
Juhyuk Park,Eun-Jeong Youn,Woojin Baek,Eun-Kyung Chu,Hyun Soo Kim,Dae‐Myeong Geum,Joon Pyo Kim,Bong Ho Kim,Song‐Hyeon Kuk,Hyeong‐Ho Park,Sanghyeon Kim
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2024-05-31
卷期号:32 (14): 24242-24242
被引量:2
摘要
In this study, we explored the size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs grown on Si substrates. We successfully demonstrated the fabrication of 4-inch wafer-scale InGaN/GaN micro-LEDs, showcasing the feasibility of large-scale production. Additionally, we presented the binary pixel display with 6 µm pitch, achieving a resolution of 4232 PPI. We also introduced a method of driving the display using PWM to linearly control and counteract the blue shift in peak wavelength caused by the QCSE and band-filling effect. Our research represents a significant milestone in the development of InGaN/GaN red micro-LEDs on Si substrates, establishing them as a key component for full-color micro-LED displays.
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