钻石
金刚石材料性能
化学气相沉积
材料科学
单晶硅
纳米技术
金刚石立方
原子单位
带隙
半导体
结晶学
光电子学
化学物理
硅
化学
物理
冶金
量子力学
作者
Junfeng Cui,Yingying Yang,Mingyang Yang,Guoyong Yang,Guoxin Chen,Lei Zhang,Cheng‐Te Lin,Sha Liu,Chun Tang,Peiling Ke,Yang Lü,Kazuhito Nishimura,Nan Jiang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-05-09
卷期号:24 (23): 7108-7115
被引量:2
标识
DOI:10.1021/acs.nanolett.4c01857
摘要
Diamond is considered the most promising next-generation semiconductor material due to its excellent physical characteristics. It has been more than three decades since the discovery of a special structure named n-diamond. However, despite extensive efforts, its crystallographic structure and properties are still unclear. Here, we show that subdisordered structures in diamond provide an explanation for the structural feature of n-diamond. Monocrystalline diamond with subdisordered structures is synthesized via the chemical vapor deposition method. Atomic-resolution scanning transmission electron microscopy characterizations combined with the picometer-precision peak finder technology and diffraction simulations reveal that picometer-scale shifts of atoms within cells of diamond govern the subdisordered structures. First-principles calculations indicate that the bandgap of diamond decreases rapidly with increasing shifting distance, in accordance with experimental results. These findings clarify the crystallographic structure and electronic properties of n-diamond and provide new insights into the bandgap adjustment in diamond.
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