Epitaxial films and devices of transparent conducting oxides: La:BaSnO3

This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO3. It presents current efforts in the synthesis science of epitaxial La:BaSnO3 films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route toward engineering defect-free epitaxial La:BaSnO3 heterostructures. By combining chemical surface characterization and electronic transport studies, special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO3 films and heterostructures. For application purposes, interesting optical properties of La:BaSnO3 films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO3-based thin-film field-effect transistors is presented together with recent progress in the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO3-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO3 films in optoelectronic and transparent electronics are also discussed.