Performance evaluation of gate engineered ferroelectric MIMOS for analog/electrical IC applications

Abstract This work examines various materials for gate electrode for enhancing the performance of M-Fe-MIMOS (Metal Ferroelectric Metal Insulator Metal Oxide Semiconductor Field Effect Transistor (MOSFET)). The device is analysed for different analog, electrical and RF parameters with gate materials such as chromium, tungsten and palladium. The gate stacked attached to MOSFET device consists ferroelectric layer sandwiched with insulator for focusing on reliability and stability of M-Fe-MIMOS. The palladium gate material for M-Fe-MIMOS(spacer) shows better analog parameters such as improvement in leakage current by 106 times that results 107 times higher switching ratio as compare to chromium. Also with higher threshold voltage by 428% and lower subthreshold swing by 340% as compare to chromium, M-Fe-MIMOS(spacer) shows better immunity towards various noise distortions. The electrical properties of the device are analysed in terms of electric field , electric potential and energy band structure.All the analysed results indicate that palladium as a gate material for the M-Fe-MIMOS shows most improved electrical performance and can further be used for various applications in nanoelectronic devices and integrated circuit (IC) design.