甲脒
材料科学
太阳能电池
钙钛矿太阳能电池
光电子学
等效串联电阻
氧化锡
钙钛矿(结构)
光伏系统
兴奋剂
化学工程
电气工程
电压
工程类
作者
David Ompong,Michelle Clements
标识
DOI:10.1016/j.rio.2024.100611
摘要
Perovskite materials have recently emerged as promising candidates as an absorber layer in solar cells. In this study, the photovoltaic performance of a formamidinium lead iodide perovskite (FAPbI3) based solar cell is assessed and improved by optimizing the thickness of the active layer using the Solar Cell Capacitance Simulator (SCAPS-1D) software. The architecture of the solar cell analyzed is a conventional planar n-i-p type composed of fluorine-doped tin oxide (FTO) as the front contact, tin oxide (SnO2) as the electron transport layer (ETL), FAPbI3 as the absorber layer, lithium bis(trifluoromethylsul-phonyl)imide (LiTFSI) doped spiro-OMeTAD as the hole transport layer (HTL), and silver (Ag) as the back contact. The simulation was carried out with and without parasitic resistances. The efficiency of the ideal device was 20.95 % when absorber thickness was between 0.68 µm and 0.78 µm and 14.45 % for the non-ideal device when the series resistance Rseries= 10 Ω·cm2 and shunt resistance Rshunt= 5000 Ω·cm2. We have found that the PCE of the original non-ideal device can be increased by 26 % through optimization of layer thickness and carrier transport.
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