材料科学
硅
锂(药物)
扫描电子显微镜
基质(水族馆)
电化学
阳极
无定形固体
薄膜
溅射沉积
非晶硅
电极
化学工程
铜
溅射
纳米技术
复合材料
光电子学
冶金
晶体硅
结晶学
化学
物理化学
内分泌学
工程类
地质学
海洋学
医学
作者
Jeffrey Maranchi,Alexander Hepp,Prashant N. Kumta
摘要
The properties of amorphous 250 nm and 1 μm silicon films deposited by radio-frequency (rf) magnetron sputtering on copper foil are investigated using -ray diffraction, scanning electron microscopy (SEM), and electrochemical methods. Galvanostatic half-cell electrochemical measurements conducted between 0.02 and 1.2 V using a lithium counter electrode have shown that the 250 nm Si thin films exhibit an excellent reversible specific capacity of nearly 3500 mAh/g when tested for 30 cycles. The high reversible capacity and excellent cyclability of the 250 nm sputtered silicon thin films suggest excellent adhesion between Si and Cu leading to high capacity retention. SEM analysis conducted on the 250 nm Si films after the 30th charge suggests the good adhesion of the diam "plates" of silicon to the copper substrate. © 2003 The Electrochemical Society. All rights reserved.
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