掺杂剂
自旋电子学
铁磁性
拓扑绝缘体
表面状态
兴奋剂
凝聚态物理
磁矩
Dirac(视频压缩格式)
材料科学
曲面(拓扑)
拓扑(电路)
物理
量子力学
几何学
数学
组合数学
中微子
作者
Chengwang Niu,Ying Dai,Zhenkui Zhang,Yandong Ma,Baibiao Huang
摘要
The manipulation effects by doping of 2p light elements X (X = B, C, and N) on topological surface states in V2VI3 (V = Bi and Sb, VI = Se and Te) are systemically explored. Our results unveil that X doping at anion sites can induce magnetic moments and gap opening at the Dirac point. To have a stable magnetic ground state, the dopant 2p states must be sufficiently localized, which closely depends on the X-V bond lengths. The incorporation of 2p dopants paves a promising way of tuning the properties of topological insulators and may find applications in spintronics.
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